Growth of strained Ga<sub>1-x</sub>In<sub>x</sub>P ...
Type de document :
Article dans une revue scientifique
Titre :
Growth of strained Ga<sub>1-x</sub>In<sub>x</sub>P layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides
Auteur(s) :
Titre de la revue :
JOURNAL OF CRYSTAL GROWTH
Pagination :
255-259
Éditeur :
Elsevier
Date de publication :
2001
ISSN :
0022-0248
Mot(s)-clé(s) en anglais :
Surfaces
Molecular beam Epitaxy
Phosphides
Semiconducting indium gallium phosphide
Molecular beam Epitaxy
Phosphides
Semiconducting indium gallium phosphide
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Résumé en anglais : [en]
Using reflection high energy electron diffraction and atomic force microscopy, the growth of Ga1−xInxP alloys on GaP (0 0 1) with x varying from 0.2 to 1 (InP) is investigated and compared to that of arsenides on GaAs (0 ...
Lire la suite >Using reflection high energy electron diffraction and atomic force microscopy, the growth of Ga1−xInxP alloys on GaP (0 0 1) with x varying from 0.2 to 1 (InP) is investigated and compared to that of arsenides on GaAs (0 0 1) or InP (0 0 1). At 520°C, the evolution of the critical thickness for 3D growth versus In content is rather similar to that observed in the GaInAs/GaAs system. For x⩽0.5, 3D growth leads to the development of wire-like structures along the [1 1 0] direction which can be related to recent results on the phosphide surface reconstructions. Finally, for the growth of InP on GaP at 520°C, the critical thickness is 2.1 MLs and we observe a small density of very large islands, in contrast to the InAs/GaAs case. At 400°C, the critical thickness decreases (1.7 MLs) as well as the island mean size whereas the density increases. We discuss this behavior in terms of surface energy.Lire moins >
Lire la suite >Using reflection high energy electron diffraction and atomic force microscopy, the growth of Ga1−xInxP alloys on GaP (0 0 1) with x varying from 0.2 to 1 (InP) is investigated and compared to that of arsenides on GaAs (0 0 1) or InP (0 0 1). At 520°C, the evolution of the critical thickness for 3D growth versus In content is rather similar to that observed in the GaInAs/GaAs system. For x⩽0.5, 3D growth leads to the development of wire-like structures along the [1 1 0] direction which can be related to recent results on the phosphide surface reconstructions. Finally, for the growth of InP on GaP at 520°C, the critical thickness is 2.1 MLs and we observe a small density of very large islands, in contrast to the InAs/GaAs case. At 400°C, the critical thickness decreases (1.7 MLs) as well as the island mean size whereas the density increases. We discuss this behavior in terms of surface energy.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :
Fichiers
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