Title :

Long dephasing time and high temperature conductance fluctuations in open InGaAs quantum dot

Author(s) :

Hackens, Benoit [Auteur]
Delfosse, François [Auteur]
Faniel, Sébastien [Auteur]
Gustin, Cédric [Auteur]
Boutry, Hervé [Auteur]
Wallart, X. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bollaert, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cappy, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bayot, Vincent [Auteur]

Journal title :

Physical Review B: Condensed Matter and Materials Physics (1998-2015)

Pages :

241305/1-4

Publisher :

American Physical Society

Publication date :

2002

ISSN :

1098-0121

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We measure the electron phase-coherence time τφ up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of τφ is quantitatively consistent ...
Show more >We measure the electron phase-coherence time τφ up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of τφ is quantitatively consistent with the two-dimensional model of electron-electron interactions in disordered systems. In our sample, τφ is two to four times larger than previously reported in GaAs quantum dots. We attribute this enhancement to a larger value of the Fermi energy and the lower electron effective mass in our sample. We also observe a distinct type of conductance fluctuation due to ballistic electron focusing inside the dot up to 204 K.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL