Titre :

Reactive ion beam etching of PZT thin films

Auteur(s) :

Soyer, Caroline [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Cattan, Eric [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Remiens, Denis [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]

Titre de la revue :

Ferroelectrics

Pagination :

253-263

Éditeur :

Taylor & Francis: STM, Behavioural Science and Public Health Titles

Date de publication :

2003

ISSN :

0015-0193

Mot(s)-clé(s) en anglais :

PZT
reactive ion beam etching
Ar/CHF3
etching damage

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Sciences de l'ingénieur [physics]/Génie des procédés
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

Lead titano-zirconate ferroelectric thin films have developed a great interest for their applications in memory devices, and more recently in microelectromechanical systems because of their interesting piezoelectric ...
Lire la suite >Lead titano-zirconate ferroelectric thin films have developed a great interest for their applications in memory devices, and more recently in microelectromechanical systems because of their interesting piezoelectric properties. The patterning has become an essential element for PZT integration in devices. Reactive ion beam etching of sputtered PZT(54/46) thin films has been performed using Ar/CHF 3 gas. The dependence of etch rate and selectivity with the etching parameters has been investigated. PZT etch rate and selectivity reaches 900 Å/min and 7.5 respectively. We have evaluated the PZT surface damage by contact mode AFM. It appears that the roughness increases after ion bombardment. We have observed electrical damaged. These degradations are underlined by carrying out C(V) and hysteresis loops before and after etching.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL