Titre :

Formation of Pt-based silicide contacts : kinetics, stochiometry and current drive capabilities

Auteur(s) :

Larrieu, Guilhem [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
DUBOIS, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Baie, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Katcki, J. [Auteur]

Titre de la revue :

Journal of Applied Physics

Pagination :

7801-7810

Éditeur :

American Institute of Physics

Date de publication :

2003

ISSN :

0021-8979

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

Résumé en anglais : [en]

A detailed analysis of the formation of Pt2Si and PtSi silicides is proposed, based on x-rayphotoelectron spectroscopy ~XPS!, transmission electron microscopy ~TEM!, and electricalcharacterizations. Published kinetics of ...
Lire la suite >A detailed analysis of the formation of Pt2Si and PtSi silicides is proposed, based on x-rayphotoelectron spectroscopy ~XPS!, transmission electron microscopy ~TEM!, and electricalcharacterizations. Published kinetics of the Pt2Si and PtSi transformations under ultrahigh vacuumcondition are consolidated on the basis of XPS measurements performed during an in situ annealingat a constant heating rate. At room temperature, an incomplete PtxSi reaction is clearly identified byXPS depth profiling. Using rapid thermal annealing at 300, 400, and 500 °C, the sequentialPt–Pt2Si–PtSi reaction chain is found to be completed within 2 min. Outdiffusion of silicon to thetop surface is shown to be responsible for the formation of a thin SiO2 capping layer at 500 °C.Pileup of oxygen occurring at the Pt2Si/Pt reaction front is clearly identified as an inhibiting factorof the silicidation mechanism. Another incomplete reaction scheme limited to the unique formationof Pt2Si is exemplified in the case of ultra thin silicon-on-insulator films. Finally, current drivemeasurements on PtSi Schottky contacts have allowed us to identify 300 °C as the optimumannealing temperature while TEM cross sections demonstrate the formation of a smooth andcontinuous PtSi/Si interface at 300 °C.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL