Title :

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Author(s) :

Di Forte-Poisson, Marie-Antoinette [Auteur]
Magis, M. [Auteur]
Thales Research and Technology [Palaiseau]
Tordjman, Maurice [Auteur]
Thales Research and Technology [Palaiseau]
Aubry, Raphaël [Auteur]
Thales Research and Technology [Palaiseau]
Sarazin, Nicolas [Auteur]
Thales Research and Technology [Palaiseau]
Peschang, M. [Auteur]
Thales Research and Technology [Palaiseau]
Morvan, Erwan [Auteur]
Thales Research and Technology [Palaiseau]
Delage, Sylvain Laurent [Auteur]
Thales Research and Technology [Palaiseau]
Di Persio, J. [Auteur]
Laboratoire de structures et propriétés de l'état solide - UMR 8008 [LSPES]
Quere, R. [Auteur]
Institut de génétique humaine [IGH]
Grimbert, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hoel, Virginie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delos, E. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
DUCATTEAU, Damien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquière, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

JOURNAL OF CRYSTAL GROWTH

Pages :

305-311

Publisher :

Elsevier

Publication date :

2004

ISSN :

0022-0248

English keyword(s) :

A1. Defects
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting III–V materials
B3. Field effect transistors
B3. Heterojunction semiconductor devices
B3. High electron mobility transistors

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

This paper reports on the LP-MOCVDgrowth optimisation of GaAlN/GaN heterostructures grown on silicon carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical ...
Show more >This paper reports on the LP-MOCVDgrowth optimisation of GaAlN/GaN heterostructures grown on silicon carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/GaN epilayers has been identified and studied using high-resolution X-ray diffraction, AFM, C2V and sonogauge measurements. SiC substrates from different suppliers were evaluated and their influence on the physical properties of the GaAlN/GaN HEMT structures were investigated. We show that the static characteristics of the devices such as maximum drain current Idss or pinch-off voltage are correlated with the nucleation layer composition ( GaN or GaAlN) of the HEMT structure and with the defect density of the SiC substrate. A maximum drain current Idss around 1 A/mm and a pinch-off voltage of -5 V have been measured for devices with a gate length of 0.3 mm and a GaN nucleation layer, to be compared to an Idss up to 1.3 A/mm obtained for devices with the same geometry but with a GaAlN nucleation layer. I2V characteristics measured under pulsed measurements have also evidenced a clear impact of the nucleation layer composition on the trap density in the GaAlN/GaN HEMT structure. The first devices related to HEMT wafers with GaN nucleation layers were measured at 10 GHz using a load pull system. They show a CW output power in excess of 2.8 W/mm for a gate length of 0.5 mm, while devices related to HEMT wafers with GaAlN nucleation layer exhibit output power up to 4 W/mm at 10 GHzShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL