Effects of grain boundaries, field dependent ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Effects of grain boundaries, field dependent mobility and interface state traps on the characteristics of pentacene thin film transistor
Author(s) :
Bolognesi, A. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma, Italia] = University of Rome Tor Vergata [Rome, Italy] = Université de Rome Tor Vergata [Rome, Italie]
Berliocchi, M. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma, Italia] = University of Rome Tor Vergata [Rome, Italy] = Université de Rome Tor Vergata [Rome, Italie]
Manenti, M. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma, Italia] = University of Rome Tor Vergata [Rome, Italy] = Université de Rome Tor Vergata [Rome, Italie]
Di Carlo, Aldo [Auteur]
Università degli Studi di Roma Tor Vergata [Roma, Italia] = University of Rome Tor Vergata [Rome, Italy] = Université de Rome Tor Vergata [Rome, Italie]
Lugli, Paolo [Auteur]
Lmimouni, Kamal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dufour, Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Università degli Studi di Roma Tor Vergata [Roma, Italia] = University of Rome Tor Vergata [Rome, Italy] = Université de Rome Tor Vergata [Rome, Italie]
Berliocchi, M. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma, Italia] = University of Rome Tor Vergata [Rome, Italy] = Université de Rome Tor Vergata [Rome, Italie]
Manenti, M. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma, Italia] = University of Rome Tor Vergata [Rome, Italy] = Université de Rome Tor Vergata [Rome, Italie]
Di Carlo, Aldo [Auteur]
Università degli Studi di Roma Tor Vergata [Roma, Italia] = University of Rome Tor Vergata [Rome, Italy] = Université de Rome Tor Vergata [Rome, Italie]
Lugli, Paolo [Auteur]
Lmimouni, Kamal [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dufour, Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
IEEE Transactions on Electron Devices
Pages :
1997-2003
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2004
ISSN :
0018-9383
English keyword(s) :
Surfaces
Thin film transistors
Semiconductor device modeling
Charge carrier mobility
Thin film transistors
Semiconductor device modeling
Charge carrier mobility
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have ...
Show more >We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have set up a model considering the polycrystalline nature of pentacene and the presence of grains and grain boundaries. We show how this model can be applied to different devices with different grain sizes and we analyze the relationship between mobility, grain size and applied gate voltage. On the basis of the simulation results, we can introduce an effective carrier mobility, which accounts for grain-related effects. The comparison between experimental results and simulations allows us to clearly understand the differences in the mobility derived by the analysis of current-voltage curve (as done experimentally by using standard MOSFET theory) and the intrinsic mobility of the organic layer. The effect of the pentacene/oxide interface traps and fixed surface charges has also been considered. The dependence of the threshold voltage on the density and energy level of the trap states has been outlined.Show less >
Show more >We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have set up a model considering the polycrystalline nature of pentacene and the presence of grains and grain boundaries. We show how this model can be applied to different devices with different grain sizes and we analyze the relationship between mobility, grain size and applied gate voltage. On the basis of the simulation results, we can introduce an effective carrier mobility, which accounts for grain-related effects. The comparison between experimental results and simulations allows us to clearly understand the differences in the mobility derived by the analysis of current-voltage curve (as done experimentally by using standard MOSFET theory) and the intrinsic mobility of the organic layer. The effect of the pentacene/oxide interface traps and fixed surface charges has also been considered. The dependence of the threshold voltage on the density and energy level of the trap states has been outlined.Show less >
Language :
Anglais
Popular science :
Non
Source :