1-octadecene monolayers on Si(111) ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
1-octadecene monolayers on Si(111) hydrogen-terminated surfaces : effect of substrate doping
Auteur(s) :
Miramond, Corinne [Auteur]
Vuillaume, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
Journal of Applied Physics
Pagination :
1529-1536
Éditeur :
American Institute of Physics
Date de publication :
2004-08
ISSN :
0021-8979
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
We have studied the electronic properties, in relation to structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical ...
Lire la suite >We have studied the electronic properties, in relation to structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between CC and SiH activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrates of different types (n type and p type) and different doping concentrations, from low-doped (∼1014cm−3) to highly doped (∼1019cm−3). We show that the monolayers on n-, p-, and p+-silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as ∼10−7Acm−2 and high-quality capacitance-voltage characteristics. The monolayers formed on n+-type silicon are more disordered and therefore exhibit larger leakage current densities (>10−4Acm−2) when embedded in a silicon∕monolayer∕metal junction. The inferior structural and electronic properties obtained with n+-type silicon pinpoint the important role of surface potential and of the position of the surface Fermi level during the chemisorption of the organic monolayers.Lire moins >
Lire la suite >We have studied the electronic properties, in relation to structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between CC and SiH activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrates of different types (n type and p type) and different doping concentrations, from low-doped (∼1014cm−3) to highly doped (∼1019cm−3). We show that the monolayers on n-, p-, and p+-silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as ∼10−7Acm−2 and high-quality capacitance-voltage characteristics. The monolayers formed on n+-type silicon are more disordered and therefore exhibit larger leakage current densities (>10−4Acm−2) when embedded in a silicon∕monolayer∕metal junction. The inferior structural and electronic properties obtained with n+-type silicon pinpoint the important role of surface potential and of the position of the surface Fermi level during the chemisorption of the organic monolayers.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
Fichiers
- https://hal.archives-ouvertes.fr/hal-00140729/document
- Accès libre
- Accéder au document
- https://hal.archives-ouvertes.fr/hal-00140729/document
- Accès libre
- Accéder au document
- document
- Accès libre
- Accéder au document
- Miramond_2004_1.1767984.pdf
- Accès libre
- Accéder au document