TEM characterisation of the erbium silicide ...
Document type :
Article dans une revue scientifique: Article original
Title :
TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate
Author(s) :
Łaszcz, A. [Auteur]
Katcki, J. [Auteur]
Ratajczak, J. [Auteur]
Tang, Xing [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Katcki, J. [Auteur]
Ratajczak, J. [Auteur]
Tang, Xing [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Dubois, Emmanuel [Auteur]

Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Journal title :
Journal of Microscopy
Pages :
38-41
Publisher :
Wiley
Publication date :
2006
ISSN :
0022-2720
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Matériaux
English abstract : [en]
Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the ...
Show more >Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450°C, 525°C and 600°C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO<sub>2</sub>/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450–600 °C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 °C, the Pt top layer vanishes and a (Pt–Er)Si<sub>x</sub> system is formed.Show less >
Show more >Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450°C, 525°C and 600°C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO<sub>2</sub>/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450–600 °C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 °C, the Pt top layer vanishes and a (Pt–Er)Si<sub>x</sub> system is formed.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
European Project :
Source :
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