Title :

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Author(s) :

Tang, Xing [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Reckinger, N. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Bayot, V. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Krzeminski, Christophe [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Villaret, A. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Bensahel, D.C. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]

Journal title :

IEEE Transactions on Nanotechnology

Pages :

649-656

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2006

ISSN :

1536-125X

English keyword(s) :

Arsenic-assisted etching and oxidation effects
Coulomb blockade effect
nanotechnology
self-aligned floating gate
single-electron memory.

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation ...
Show more >Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial applicationShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL