Boundary conditions for realistic simulation ...
Type de document :
Article dans une revue scientifique: Article original
Titre :
Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
Auteur(s) :
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dessenne, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Thobel, Jean-Luc [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaknoune, Mohammed [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Théron, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dessenne, François [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Thobel, Jean-Luc [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaknoune, Mohammed [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Théron, Didier [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
Solid-State Electronics
Pagination :
683-688
Éditeur :
Elsevier
Date de publication :
2004
ISSN :
0038-1101
Mot(s)-clé(s) en anglais :
Boundary conditions
Heterojunctions
Monte Carlo simulation
Ohmic contacts
Semiconductor devices
Heterojunctions
Monte Carlo simulation
Ohmic contacts
Semiconductor devices
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary ...
Lire la suite >This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced by BC, especially in the case of submicron gate lengths. Standard models prescribe a neutrally charged region and are inconsistent with the presence of heterojunctions. This may lead to dramatically unphysical effects. An alternative is proposed where an equilibrium density profile is self-consistently calculated and serves as BC. The comparison of our new model with the former one has been performed and we have used experimental structures to optimise the model parameters.Lire moins >
Lire la suite >This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced by BC, especially in the case of submicron gate lengths. Standard models prescribe a neutrally charged region and are inconsistent with the presence of heterojunctions. This may lead to dramatically unphysical effects. An alternative is proposed where an equilibrium density profile is self-consistently calculated and serves as BC. The comparison of our new model with the former one has been performed and we have used experimental structures to optimise the model parameters.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Non spécifiée
Vulgarisation :
Non
Source :
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