Multiexponential photoluminescence decay ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals
Author(s) :
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Reynaud, Cécile [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Guillois, Olivier [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Ledoux, Gilles [Auteur]
Laboratoire de Physico-Chimie des Matériaux Luminescents [LPCML]
Huisken, Friedrich [Auteur]
University of Applied Sciences Jena [EAH Jena]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Reynaud, Cécile [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Guillois, Olivier [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Ledoux, Gilles [Auteur]
Laboratoire de Physico-Chimie des Matériaux Luminescents [LPCML]
Huisken, Friedrich [Auteur]
University of Applied Sciences Jena [EAH Jena]
Journal title :
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Pages :
235318-1-4
Publisher :
American Physical Society
Publication date :
2006
ISSN :
1098-0121
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of ...
Show more >The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of phonon-assisted optical transitions showing that the distribution of lifetimes and its wavelength dependence are quantitatively predictable and can be interpreted as intrinsic properties of the QDs due to the indirect nature of the Si bandgap. This result can be generalized to QD ensembles of any indirect gap semiconductor.Show less >
Show more >The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of phonon-assisted optical transitions showing that the distribution of lifetimes and its wavelength dependence are quantitatively predictable and can be interpreted as intrinsic properties of the QDs due to the indirect nature of the Si bandgap. This result can be generalized to QD ensembles of any indirect gap semiconductor.Show less >
Language :
Anglais
Popular science :
Non
Source :