Effective dielectric constant of nanostructured Si layers

Delerue, Christophe; Allan, Guy

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1063/1.2198814

Title :

Effective dielectric constant of nanostructured Si layers

Author(s) :

Delerue, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Applied Physics Letters

Pages :

173117-1-3

Publisher :

American Institute of Physics

Publication date :

2006

ISSN :

0003-6951

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We calculate the dielectric response of single layers of cubic and spherical Si nanocrystals using a self-consistent tight binding approach. We show that the effective dielectric constant is strongly influenced by the ...
Show more >We calculate the dielectric response of single layers of cubic and spherical Si nanocrystals using a self-consistent tight binding approach. We show that the effective dielectric constant is strongly influenced by the nanostructuring, leading to a strong reduction with respect to the bulk dielectric constant and to the value for the perfectly crystalline layer. These results are explained by the effect of the local fields and by the reduction of the dielectric response near the surface of the nanocrystals. We provide analytical expressions for the effective dielectric constant versus size.Show less >

Language :

Anglais

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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