Title :

Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence X-ray anomalous diffraction

Author(s) :

Létoublon, Antoine [Auteur]
Favre-Nicolin, Vincent [Auteur]
Renevier, Hubert [Auteur]
M.G., Proietti [Auteur]
Monat, C. [Auteur]
Laboratoire d'électronique, optoélectronique et microsystèmes [LEOM]
Gendry, M. [Auteur]
Laboratoire d'électronique, optoélectronique et microsystèmes [LEOM]
Marty, Olivier [Auteur]
Laboratoire d'Electronique, Nanotechnologies, Capteurs [LENAC]
Priester, Catherine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Physical Review Letters

Pages :

186101

Publisher :

American Physical Society

Publication date :

2004-05-07

ISSN :

0031-9007

English keyword(s) :

InAs nanostructure anomalous diffraction synchrotron strain MBE growth

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

We have used x-ray anomalous diffraction to recover the model-independent Fourier transform (x-ray structure factor) of InAs quantum sticklike islands embedded in InP. The average height of the quantum sticks, as deduced ...
Show more >We have used x-ray anomalous diffraction to recover the model-independent Fourier transform (x-ray structure factor) of InAs quantum sticklike islands embedded in InP. The average height of the quantum sticks, as deduced from the width of the structure factor profile, is 2.54 nm. The InAs out-of-plane deformation, relative to InP, is 6.1%. Diffraction anomalous fine structure provides evidence of pure InAs quantum sticks. Finite difference method calculations reproduce well the diffraction data, and give the strain along the growth direction. The chemical mixing at interfaces is also analyzed.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Comment :

4pages

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL