Title :

A combined RHEED and photoemission comparison of the GaP and InP (001) (2x4) surface reconstructions

Author(s) :

Wallart, X. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces

Pages :

203-212

Publisher :

Elsevier

Publication date :

2002

ISSN :

0039-6028

English keyword(s) :

Gallium phosphide
Indium phosphide
Molecular beam epitaxy
Reflection high-energy electron diffraction (RHEED)
Surface relaxation and reconstruction
X-ray photoelectron spectroscopy

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this work, we compare the (2×4) reconstructions of GaP and InP(0 0 1) surfaces. Two different (2×4) reconstructions are detected by reflection high energy electron diffraction for both materials. Photoemission experiments ...
Show more >In this work, we compare the (2×4) reconstructions of GaP and InP(0 0 1) surfaces. Two different (2×4) reconstructions are detected by reflection high energy electron diffraction for both materials. Photoemission experiments reveal that the high temperature one is cation-rich whereas the low temperature one is anion-rich. High resolution spectra on the high temperature (2×4) reconstructions exhibit surface components which are in agreement with what is expected from the mixed-dimer model in both cases. As regards the low temperature (2×4) GaP, a second surface component on the P 2p core level line reveals that two different atomic sites exist for the P-atoms at the surface which is different from the β2 (2×4) geometry. The low temperature (2×4) InP is more phosphorus-rich and turns to be a mixture between the (2×1) and the high temperature (2×4) reconstructions.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL