High-power high-efficiency millimeter wave ...
Document type :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
DOI :
Title :
High-power high-efficiency millimeter wave TED's with reverse-biased heterojunction cathode contact
Author(s) :
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Paul-Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Duchemin, J.P. [Auteur]
Lacombe, J. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Paul-Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Duchemin, J.P. [Auteur]
Lacombe, J. [Auteur]
Conference title :
15th European Microwave Conference
City :
Paris
Country :
France
Start date of the conference :
1985-09-09
Publication date :
1985
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The purpose of this paper is to present theoretical results on current limiting cathode contact InP TED's in the millimeter wave range. The current limiting effect is obtained from a reverse-biased GaInAsP on InP isotype ...
Show more >The purpose of this paper is to present theoretical results on current limiting cathode contact InP TED's in the millimeter wave range. The current limiting effect is obtained from a reverse-biased GaInAsP on InP isotype heterojunction. This kind of cathode contact yields an efficient over length dipolar layers mode up to the ultimate cut-off frequency of the negative differential mobility in InP (~200 GHz). Theoretically expected results are reported. Thermal and frequency limitations are discussed. We also mention the main problems encountered in the preliminary technological study of these devices.Show less >
Show more >The purpose of this paper is to present theoretical results on current limiting cathode contact InP TED's in the millimeter wave range. The current limiting effect is obtained from a reverse-biased GaInAsP on InP isotype heterojunction. This kind of cathode contact yields an efficient over length dipolar layers mode up to the ultimate cut-off frequency of the negative differential mobility in InP (~200 GHz). Theoretically expected results are reported. Thermal and frequency limitations are discussed. We also mention the main problems encountered in the preliminary technological study of these devices.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :