High-power high-efficiency millimeter wave ...
Type de document :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
DOI :
Titre :
High-power high-efficiency millimeter wave TED's with reverse-biased heterojunction cathode contact
Auteur(s) :
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Paul-Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Duchemin, J.P. [Auteur]
Lacombe, J. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Paul-Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Duchemin, J.P. [Auteur]
Lacombe, J. [Auteur]
Titre de la manifestation scientifique :
15th European Microwave Conference
Ville :
Paris
Pays :
France
Date de début de la manifestation scientifique :
1985-09-09
Date de publication :
1985
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
The purpose of this paper is to present theoretical results on current limiting cathode contact InP TED's in the millimeter wave range. The current limiting effect is obtained from a reverse-biased GaInAsP on InP isotype ...
Lire la suite >The purpose of this paper is to present theoretical results on current limiting cathode contact InP TED's in the millimeter wave range. The current limiting effect is obtained from a reverse-biased GaInAsP on InP isotype heterojunction. This kind of cathode contact yields an efficient over length dipolar layers mode up to the ultimate cut-off frequency of the negative differential mobility in InP (~200 GHz). Theoretically expected results are reported. Thermal and frequency limitations are discussed. We also mention the main problems encountered in the preliminary technological study of these devices.Lire moins >
Lire la suite >The purpose of this paper is to present theoretical results on current limiting cathode contact InP TED's in the millimeter wave range. The current limiting effect is obtained from a reverse-biased GaInAsP on InP isotype heterojunction. This kind of cathode contact yields an efficient over length dipolar layers mode up to the ultimate cut-off frequency of the negative differential mobility in InP (~200 GHz). Theoretically expected results are reported. Thermal and frequency limitations are discussed. We also mention the main problems encountered in the preliminary technological study of these devices.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Non spécifiée
Vulgarisation :
Non
Source :