Metal/organic/metal bistable memory devices

Vuillaume, Dominique; Lmimouni, Kamal; Tondelier, Denis; Fery, Christophe; Haas, Gunther

Document type :

Pré-publication ou Document de travail

Title :

Metal/organic/metal bistable memory devices

Author(s) :

Vuillaume, Dominique [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lmimouni, Kamal [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tondelier, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fery, Christophe [Auteur]
Thomson Multimedia R&D France
Haas, Gunther [Auteur]
Thomson Multimedia R&D France

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. ...
Show more >We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002)]. We demonstrate that the two devices exhibit similar temperature-dependent behaviors, a thermally-activated behavior in their low conductive state (off-state) and a slightly "metallic" behavior in their high conductive state (on-state). This feature emphasizes a similar origin for the memory effect. Owing to their similar behavior, the one layer memory is advantageous in terms of fabrication cost and simplicity.Show less >

Language :

Anglais

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

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http://arxiv.org/pdf/cond-mat/0409758
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https://hal.archives-ouvertes.fr/hal-00002988/document
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https://hal.archives-ouvertes.fr/hal-00002988/document
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Metal/organic/metal bistable memory devices

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