AlN-based HEMTs grown on silicon substrate ...
Type de document :
Communication dans un congrès avec actes
Titre :
AlN-based HEMTs grown on silicon substrate by NH3-MBE
Auteur(s) :
Rennesson, Stephanie [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Nemoz, M. [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Massies, Jeans [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Chenot, Stéphane [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Largeau, Ludovic [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Dogmus, Ezgi [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Nemoz, M. [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Massies, Jeans [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Chenot, Stéphane [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Largeau, Ludovic [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Dogmus, Ezgi [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la manifestation scientifique :
12th International Conference on Nitride Semiconductors 2017 (ICNS-12)
Ville :
Strasbourg
Pays :
France
Date de début de la manifestation scientifique :
2017-07-24
Titre de la revue :
ICNS-12
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is ...
Lire la suite >In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing a relaxed AlN buffer on silicon, then a compressively strained thin-GaN channel on top of which an almost strain-free AlN barrier is grown. The concept has been demonstrated by D. Jena et al. on AlN-on-sapphire template, as well as on SiC. However 2DEG mobility values obtained are still quite low mainly due to growth issues. In this work, we take advantage of our strong know-how in growing pure AlN on silicon using MBE. Indeed, since the past 20 years, strong efforts have been successfully conducted, in order to develop a suitable AlN nucleation/buffer layer on Si substrate (with smooth AlN surface, high crystalline quality, controlled and reproducible AlN/Si interface). With a total epilayer thickness < 330nm-thick, a 2DEG density (Ns) as high as 2.7x1013 cm-2 is measured before passivation. Results indicate that Ns increases improving the material quality as well as using SiN surface passivation. An original in-situ SiN surface passivation using NH3-MBE is presented. State-of-the-art AlN-based HEMT mobility values above 600 cm²/Vs are measured and recent improvements are on going to lower the sheet resistance as required for RF applicationsLire moins >
Lire la suite >In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing a relaxed AlN buffer on silicon, then a compressively strained thin-GaN channel on top of which an almost strain-free AlN barrier is grown. The concept has been demonstrated by D. Jena et al. on AlN-on-sapphire template, as well as on SiC. However 2DEG mobility values obtained are still quite low mainly due to growth issues. In this work, we take advantage of our strong know-how in growing pure AlN on silicon using MBE. Indeed, since the past 20 years, strong efforts have been successfully conducted, in order to develop a suitable AlN nucleation/buffer layer on Si substrate (with smooth AlN surface, high crystalline quality, controlled and reproducible AlN/Si interface). With a total epilayer thickness < 330nm-thick, a 2DEG density (Ns) as high as 2.7x1013 cm-2 is measured before passivation. Results indicate that Ns increases improving the material quality as well as using SiN surface passivation. An original in-situ SiN surface passivation using NH3-MBE is presented. State-of-the-art AlN-based HEMT mobility values above 600 cm²/Vs are measured and recent improvements are on going to lower the sheet resistance as required for RF applicationsLire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :