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Electronic States and Luminescence in ...
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Document type :
Article dans une revue scientifique
DOI :
10.1103/PhysRevLett.82.197
Title :
Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen
Author(s) :
Wolkin, M. [Auteur]
Jorne, Jacob [Auteur]
Fauchet, P. [Auteur]
Department of Electrical Engineering [Rochester]
Allan, Guy [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Journal title :
Physical Review Letters
Pages :
197-200
Publisher :
American Physical Society
Publication date :
1999-01
ISSN :
0031-9007
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]
English abstract : [en]
Depending on the size, the photoluminescence (PL) of silicon quantum dots present in porous silicon can be tuned from the near infrared to the ultraviolet when the surface is passivated with Si-H bonds. After exposure to ...
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Depending on the size, the photoluminescence (PL) of silicon quantum dots present in porous silicon can be tuned from the near infrared to the ultraviolet when the surface is passivated with Si-H bonds. After exposure to oxygen, the PL shifts to the red by as much as 1 eV. This shift and the changes in PL intensity and decay time, show that both quantum confinement and surface passivation determine the electronic states of silicon quantum dots. A theoretical model in which new electronic states appear in the band gap of the smaller quantum dots when a Si-O bond is formed, is in good agreement with experiments. This result clarifies the controversy regarding the PL mechanisms in porous silicon.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
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