Analysis of trap states in AlGaN/GaN ...
Document type :
Communication dans un congrès avec actes
Title :
Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
Author(s) :
Perez-Martin, E. []
Vaquero, D. [Auteur]
Sanchez-Martin, H. [Auteur]
Gaquière, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Raposo, V. J. [Auteur]
Gonzalez, T. [Auteur]
Mateos, J. [Auteur]
Iniguez-De-La-Torre, I. [Auteur]
Vaquero, D. [Auteur]
Sanchez-Martin, H. [Auteur]
Gaquière, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Raposo, V. J. [Auteur]
Gonzalez, T. [Auteur]
Mateos, J. [Auteur]
Iniguez-De-La-Torre, I. [Auteur]
Conference title :
31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020
City :
Athens
Country :
Grèce
Start date of the conference :
2020-10-04
Book title :
Microelectron. Reliab. 114, Special issue (2020)
Journal title :
Microelectronics Reliability
Microelectron. Reliab. 114, Special issue (2020)
Microelectron. Reliab. 114, Special issue (2020)
Publisher :
Elsevier
Publication date :
2020-10
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to ...
Show more >The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us to determine two different characteristic energies of the traps, 12 meV and 61 meV, being associated to a distribution of surface states and one discrete bulk trap, respectively. The impact of the trapping effects on microwave detection at zero-bias has also been analyzed in the same temperature range, the measured responsivity showing an unusual enhancement and a low-frequency roll-off at low temperatures.Show less >
Show more >The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us to determine two different characteristic energies of the traps, 12 meV and 61 meV, being associated to a distribution of surface states and one discrete bulk trap, respectively. The impact of the trapping effects on microwave detection at zero-bias has also been analyzed in the same temperature range, the measured responsivity showing an unusual enhancement and a low-frequency roll-off at low temperatures.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Comment :
31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020, Athens, Greece, october 4-8, 2020, Microelectron. Reliab. 114, Special issue (2020) 113806, ISSN 0026-2714
Source :
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