Title :

Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

Author(s) :

Perez-Martin, E. []
Vaquero, D. [Auteur]
Sanchez-Martin, H. [Auteur]
Gaquière, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Raposo, V. J. [Auteur]
Gonzalez, T. [Auteur]
Mateos, J. [Auteur]
Iniguez-De-La-Torre, I. [Auteur]

Conference title :

31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020

City :

Athens

Country :

Grèce

Start date of the conference :

2020-10-04

Book title :

Microelectron. Reliab. 114, Special issue (2020)

Journal title :

Microelectronics Reliability
Microelectron. Reliab. 114, Special issue (2020)

Publisher :

Elsevier

Publication date :

2020-10

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to ...
Show more >The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us to determine two different characteristic energies of the traps, 12 meV and 61 meV, being associated to a distribution of surface states and one discrete bulk trap, respectively. The impact of the trapping effects on microwave detection at zero-bias has also been analyzed in the same temperature range, the measured responsivity showing an unusual enhancement and a low-frequency roll-off at low temperatures.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Comment :

31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020, Athens, Greece, october 4-8, 2020, Microelectron. Reliab. 114, Special issue (2020) 113806, ISSN 0026-2714

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL