Contact resistance study of “edge-contacted” ...
Type de document :
Communication dans un congrès avec actes
Titre :
Contact resistance study of “edge-contacted” metal-graphene interfaces
Auteur(s) :
Passi, V. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gahoi, A. [Auteur]
Ruhkopf, J. [Auteur]
Kataria, S. [Auteur]
Vaurette, Francois [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lemme, M. C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gahoi, A. [Auteur]
Ruhkopf, J. [Auteur]
Kataria, S. [Auteur]
Vaurette, Francois [Auteur]

Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lemme, M. C. [Auteur]
Titre de la manifestation scientifique :
46th European Solid-State Device Conference, ESSDERC 2016
Ville :
Lausanne
Pays :
Suisse
Date de début de la manifestation scientifique :
2016-09-12
Titre de l’ouvrage :
2016 46th European Solid-State Device Research Conference (ESSDERC)
Éditeur :
IEEE
Date de publication :
2016
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". ...
Lire la suite >The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". The parameter space for different hole patterns in graphene is explored. The contact resistance is reduced from 1518 Omega mu m for structures without holes to 456 Omega mu m in structures with holes of 500 nm diameter everywhere under the contact. These values were achieved at the Dirac point, i.e. at the point of minimum carrier density in graphene and they correspond to a reduction of 70%. These results provide a clear path towards higher performance in graphene based electronic devices, which are often limited by unreliable and high RC.Lire moins >
Lire la suite >The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". The parameter space for different hole patterns in graphene is explored. The contact resistance is reduced from 1518 Omega mu m for structures without holes to 456 Omega mu m in structures with holes of 500 nm diameter everywhere under the contact. These values were achieved at the Dirac point, i.e. at the point of minimum carrier density in graphene and they correspond to a reduction of 70%. These results provide a clear path towards higher performance in graphene based electronic devices, which are often limited by unreliable and high RC.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :