Modeling and simulation of InAs/GaAs quantum ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Modeling and simulation of InAs/GaAs quantum dots for solar cell applications
Auteur(s) :
Benahmed, A. [Auteur]
Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benkouider, Abdelmalek [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]
Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benkouider, Abdelmalek [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]
Titre de la revue :
Optik
Pagination :
3531-3534
Éditeur :
Elsevier
Date de publication :
2016
ISSN :
0030-4026
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Résumé en anglais : [en]
This paper proposes a method of modeling and simulation of InAs/GaAs-based quantum dots (QDs) for solar cell. The main objective is to find the growth parameters in order to produce an optimal double heterostructure using ...
Lire la suite >This paper proposes a method of modeling and simulation of InAs/GaAs-based quantum dots (QDs) for solar cell. The main objective is to find the growth parameters in order to produce an optimal double heterostructure using two semiconductor materials InAs and GaAs. We are interested in particular on the impact of the growth control parameters on the physical properties of the two-dimensional InAs mono-layer. We report here a complete but non-exhaustive analysis of the electronic states of the InAs based QDs layers grown on a GaAs substrate. In this work, the reader will find the modeling and the simulation results for both rectangular and elliptical geometries of InAs QDs. In the first part of this work, we provided the change of the electronic transition energy as a function of quantum dots' radius whilst the second one concerns the absorption coefficient as a function of the incident photon wavelength. The curves we have obtained indicate clearly that the geometrical shape of the InAs QDs does significantly modify the various parameters above. We could therefore confirm that the more appropriate geometry is the elliptical one because of the higher performances. (C) 2016 Elsevier GmbH. All rights reserved.Lire moins >
Lire la suite >This paper proposes a method of modeling and simulation of InAs/GaAs-based quantum dots (QDs) for solar cell. The main objective is to find the growth parameters in order to produce an optimal double heterostructure using two semiconductor materials InAs and GaAs. We are interested in particular on the impact of the growth control parameters on the physical properties of the two-dimensional InAs mono-layer. We report here a complete but non-exhaustive analysis of the electronic states of the InAs based QDs layers grown on a GaAs substrate. In this work, the reader will find the modeling and the simulation results for both rectangular and elliptical geometries of InAs QDs. In the first part of this work, we provided the change of the electronic transition energy as a function of quantum dots' radius whilst the second one concerns the absorption coefficient as a function of the incident photon wavelength. The curves we have obtained indicate clearly that the geometrical shape of the InAs QDs does significantly modify the various parameters above. We could therefore confirm that the more appropriate geometry is the elliptical one because of the higher performances. (C) 2016 Elsevier GmbH. All rights reserved.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :