Titre :

Control of gallium incorporation in sol–gel derived CuIn(1−x)GaxS2 thin films for photovoltaic applications

Auteur(s) :

Bourlier, Yoan [Auteur]
Robbe, Odile Cristini [Auteur]
Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée - UAR 3380 [IRCICA]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Lethien, Christophe [Auteur]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Roussel, Pascal [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Pastre, Aymeric [Auteur]
Zegaoui, Malek [Auteur]
Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée - UAR 3380 [IRCICA]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Nathalie [Auteur]
Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée - UAR 3380 [IRCICA]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bouazaoui, Mohamed [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Bernard, Rémy [Auteur]

Titre de la revue :

Materials Research Bulletin

Pagination :

137-144

Éditeur :

Elsevier

Date de publication :

2015-04-13

ISSN :

0025-5408

Discipline(s) HAL :

Physique [physics]
Chimie/Matériaux

Résumé en anglais : [en]

In this paper, we report the elaboration of Cu(In,Ga)S2 chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were ...
Lire la suite >In this paper, we report the elaboration of Cu(In,Ga)S2 chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layers using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn(1−x)GaxS2 thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn(1−x)GaxS2, clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL