Hexagonal Si−Ge Class of Semiconducting ...
Type de document :
Article dans une revue scientifique
DOI :
URL permanente :
Titre :
Hexagonal Si−Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature
Auteur(s) :
Serghiou, George [Auteur]
Odling, Nicholas [Auteur]
Reichmann, Hans Josef [Auteur]
Ji, Gang [Auteur]
Unité Matériaux et Transformations (UMET) - UMR 8207
Koch‐Müller, Monika [Auteur]
Frost, Daniel J. [Auteur]
Wright, Jonathan P. [Auteur]
Boehler, Reinhard [Auteur]
Morgenroth, Wolfgang [Auteur]
Odling, Nicholas [Auteur]
Reichmann, Hans Josef [Auteur]
Ji, Gang [Auteur]
Unité Matériaux et Transformations (UMET) - UMR 8207
Koch‐Müller, Monika [Auteur]
Frost, Daniel J. [Auteur]
Wright, Jonathan P. [Auteur]
Boehler, Reinhard [Auteur]
Morgenroth, Wolfgang [Auteur]
Titre de la revue :
Chemistry – A European Journal
Nom court de la revue :
Chem. Eur. J.
Numéro :
27
Éditeur :
Wiley
Date de publication :
2021-09-16
ISSN :
0947-6539
Discipline(s) HAL :
Chimie/Matériaux
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Résumé en anglais : [en]
Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, ...
Lire la suite >Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.Lire moins >
Lire la suite >Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Établissement(s) :
Université de Lille
CNRS
INRA
ENSCL
CNRS
INRA
ENSCL
Collections :
Équipe(s) de recherche :
Métallurgie Physique et Génie des Matériaux
Date de dépôt :
2021-10-15T18:30:18Z
2021-10-18T07:10:58Z
2021-10-18T07:10:58Z