Title :

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

Author(s) :

Albany, F. [Auteur]
Université de Bordeaux [UB]
Curutchet, A. [Auteur]
Université de Bordeaux [UB]
Labat, N. [Auteur]
Université de Bordeaux [UB]
Lecourt, F. [Auteur]
Walasiak, E. [Auteur]
Maher, H. [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Cordier, Y. [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Defrance, N. [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Malbert, N. [Auteur]
Université de Bordeaux [UB]

Conference title :

15th European Microwave Integrated Circuits Conference, EuMIC 2020

City :

Utrecht

Country :

Pays-Bas

Start date of the conference :

2021-01-11

Publisher :

Institute of Electrical and Electronics Engineers Inc.

Publication date :

2021

English keyword(s) :

AlGaN/GaN HEMT
fluorine implant
normally-off
reliability
step-stress methodology

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting ...
Show more >The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-situ monitoring of gate and drain current degradations can be achieved without the use of conventional I-V interim measurements. A negative shift of the threshold voltage leading to an increase of the drain current is observed after the stress sequence carried out in semi-on-state regime. Currents monitoring during non-stressful steps reveal no permanent degradation up to stress step at VDS ˜ 19.5V and a self-healing mechanism occurring during non-stressful steps. By avoiding intermediate I-V control measurements after each stress step, this methodology provides a safe in-situ monitoring of degradations.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération
Réseau national sur GaN

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL