Titre :

Single-pole-double-throw RF switches based on monolayer MoS₂

Auteur(s) :

Kim, Myungsoo [Auteur]
University of Texas at Austin [Austin]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
University of Lille
Happy, Henri [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
University of Lille
Akinwande, Deji [Auteur correspondant]
University of Texas at Austin [Austin]

Titre de la manifestation scientifique :

2021 Device Research Conference, DRC 2021

Ville :

Santa Barbara, CA

Pays :

Etats-Unis d'Amérique

Date de début de la manifestation scientifique :

2021-06-20

Éditeur :

Institute of Electrical and Electronics Engineers Inc.

Date de publication :

2021

Mot(s)-clé(s) en anglais :

Radio frequency
Resistance
Nonvolatile memory
Cutoff frequency
Insertion loss
Capacitance
Power dissipation

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output ...
Lire la suite >Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches based on memory devices have been investigated with the potential of zero static power dissipation [3] - [6] . In order to attain a high figure-of-merit cutoff frequency (F_CO=1/2πR_ON C_OFF), RF switches with low ON-state resistance to minimize insertion loss, and low OFF-state capacitance for maximum isolation are desirable.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL