Lead-free piezoelectric thin films for ...
Document type :
Article dans une revue scientifique: Article original
Title :
Lead-free piezoelectric thin films for RoHS devices
Author(s) :
Fasquelle, Didier [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Mascot, Manuel [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Sama, N. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Remiens, Denis [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Carru, Jean-Claude [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Mascot, Manuel [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Sama, N. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Remiens, Denis [Auteur]

Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Carru, Jean-Claude [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Journal title :
Sensors and Actuators A: Physical
Pages :
30-35
Publisher :
Elsevier
Publication date :
2015-06-15
ISSN :
0924-4247
English keyword(s) :
BST
BTS
Piezoelectric
Sol-gel
Thin films
BTS
Piezoelectric
Sol-gel
Thin films
HAL domain(s) :
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
This paper reports a study of Ba0.9Sr0.1TiO3 and BaTi0.98Sn0.02O3 thin films elaborated by a sol-gel route and deposited on Pt/Ti/SiO2/Si substrates. These films were annealed at 950 C and exhibited a polycrystalline ...
Show more >This paper reports a study of Ba0.9Sr0.1TiO3 and BaTi0.98Sn0.02O3 thin films elaborated by a sol-gel route and deposited on Pt/Ti/SiO2/Si substrates. These films were annealed at 950 C and exhibited a polycrystalline structure. The AFM analysis revealed an important difference in the microstructure of the BST and BTS films. Our BTS film showed no significant piezoelectric properties as its coefficients were d33 = 5 pC/N and 4 pm/V for the direct and reverse measurements. Under our optimized annealing conditions, we gave the evidence that ferroelectric Ba0.9Sr0.1TiO3 could be a good candidate to replace PZT in RoHS microelectronic devices, therefore for green applications where lead must be prohibited, and that, despite the factor 2 or 3 between coefficients measured on PZT and lead-free films.Show less >
Show more >This paper reports a study of Ba0.9Sr0.1TiO3 and BaTi0.98Sn0.02O3 thin films elaborated by a sol-gel route and deposited on Pt/Ti/SiO2/Si substrates. These films were annealed at 950 C and exhibited a polycrystalline structure. The AFM analysis revealed an important difference in the microstructure of the BST and BTS films. Our BTS film showed no significant piezoelectric properties as its coefficients were d33 = 5 pC/N and 4 pm/V for the direct and reverse measurements. Under our optimized annealing conditions, we gave the evidence that ferroelectric Ba0.9Sr0.1TiO3 could be a good candidate to replace PZT in RoHS microelectronic devices, therefore for green applications where lead must be prohibited, and that, despite the factor 2 or 3 between coefficients measured on PZT and lead-free films.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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