Title :

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Author(s) :

Albany, Florent [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Lecourt, François [Auteur]
OMMIC
Walasiak, Ewa [Auteur]
OMMIC
Defrance, N. [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Curutchet, Arnaud [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Maher, Hassan [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Labat, Nathalie [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Malbert, Nathalie [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]

Journal title :

Microelectronics Reliability

Pages :

114291

Publisher :

Elsevier

Publication date :

2021

ISSN :

0026-2714

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Fluorine ion migration in normally-off AlN/GaN HEMTs fabricated by fluorine ion plasma implantation technology is evidenced. Devices under test are co-integrated into the OMMIC commercial D006GH/D01GH MMIC process, providing ...
Show more >Fluorine ion migration in normally-off AlN/GaN HEMTs fabricated by fluorine ion plasma implantation technology is evidenced. Devices under test are co-integrated into the OMMIC commercial D006GH/D01GH MMIC process, providing fluorine-free normally-on HEMTs. Gate reverse bias step-stress experiment at a drain fixed voltage of 0 V, carried out as well on normally-on ones as on normally-off ones, shows a permanent negative shift in the threshold voltage V-th of normally-off devices only. V-th degradation is starting at a V-GS,V- stress of -8 V, with a negative shift from 0 V to -0.4 V at V-GS,V-stress = -30 V, while the transconductance g(m) and g(m,max) remains unchanged prior to breakdown that occurred at V-GS,V-stress ranging between -26 and -32 V. Since the positive threshold voltage of these devices is induced by F-ions dose and position, the above result suggests a possible drift of F-ions away from the 2DEG channel. A field-assisted migration mechanism of fluorine ions is proposed and supported by the absence of V-th degradation in fluorine-free normally-on devices.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Réseau national sur GaN

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL