GaN Schottky diode on sapphire substrate ...
Document type :
Article dans une revue scientifique: Article original
Title :
GaN Schottky diode on sapphire substrate for THz frequency multiplier applications
Author(s) :
Di Gioia, Giuseppe [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Samnouni, Mohammed [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chinni, Vinay Kumar [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mondal, Priyanka [Auteur]
Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres [LERMA]
Treuttel, Jeanne [Auteur]
Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres [LERMA]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Roelens, Yannick [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Samnouni, Mohammed [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chinni, Vinay Kumar [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mondal, Priyanka [Auteur]
Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres [LERMA]
Treuttel, Jeanne [Auteur]
Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres [LERMA]
Zegaoui, Malek [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaknoune, Mohammed [Auteur]

Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Roelens, Yannick [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Journal title :
Superlattices and Microstructures
Pages :
107116
Publisher :
Elsevier
Publication date :
2022-04
ISSN :
0749-6036
English keyword(s) :
Frequency multiplier
GaN
Schottky diode
THz
GaN
Schottky diode
THz
HAL domain(s) :
Physique [physics]
English abstract : [en]
Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as candidate for Schottky varactor ...
Show more >Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as candidate for Schottky varactor diodes for next-generation high-power frequency multipliers. Similarly to the huge interest in the field of HEMT for high frequency and power application, GaN Schottky diodes is of a high interest for the next technological step for frequency multipliers for THz generations, replacing GaAs Schottky diodes. Due to a lack of research focused on GaN Schottky diodes for frequency multiplication, the design and fabrication of GaN frequency multipliers remains a technological challenge. In this paper, we present GaN Schottky diodes fabricated on a heteroepitaxial GaN on sapphire. The barrier height obtained is around 0.53 eV, and it increases up to 0.73 eV after Schottky contact annealing; and the ideality factor is equal to 1.1 before annealing and 1.2 after annealing. The resulting series resistance is very low, 7Ω and 1Ω, before and after annealing, respectively. © 2021 Elsevier LtdShow less >
Show more >Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as candidate for Schottky varactor diodes for next-generation high-power frequency multipliers. Similarly to the huge interest in the field of HEMT for high frequency and power application, GaN Schottky diodes is of a high interest for the next technological step for frequency multipliers for THz generations, replacing GaAs Schottky diodes. Due to a lack of research focused on GaN Schottky diodes for frequency multiplication, the design and fabrication of GaN frequency multipliers remains a technological challenge. In this paper, we present GaN Schottky diodes fabricated on a heteroepitaxial GaN on sapphire. The barrier height obtained is around 0.53 eV, and it increases up to 0.73 eV after Schottky contact annealing; and the ideality factor is equal to 1.1 before annealing and 1.2 after annealing. The resulting series resistance is very low, 7Ω and 1Ω, before and after annealing, respectively. © 2021 Elsevier LtdShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :
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