SiGe Based LNA for Data Communication ...
Document type :
Communication dans un congrès avec actes
Title :
SiGe Based LNA for Data Communication Applications at 211 GHz
Author(s) :
Ghanem, Haitham [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Lepilliet, sl [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Danneville, François [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Lepilliet, sl [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Danneville, François [Auteur]

Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
City :
Chengdu
Country :
Chine
Start date of the conference :
2021-08-29
Publisher :
IEEE
English keyword(s) :
data communication
elemental semiconductors
error statistics
low noise amplifiers
next generation networks
photodiodes
preamplifiers
silicon
wireless channels
elemental semiconductors
error statistics
low noise amplifiers
next generation networks
photodiodes
preamplifiers
silicon
wireless channels
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We report the use of a silicon based 211 GHz preamplifier for THz links. A test bench setup is assembled to evaluate the performance of the amplifier using a uni-traveling-carrier photodiode (UTC-PD) as the source of a ...
Show more >We report the use of a silicon based 211 GHz preamplifier for THz links. A test bench setup is assembled to evaluate the performance of the amplifier using a uni-traveling-carrier photodiode (UTC-PD) as the source of a 5Gbps modulated signal. The Bit Error Rate curve was extracted versus the input power, with and without the amplifier. It is verified that the system margin in the BER curve is improved in relation with the amplifier gain. The use of the silicon based active stage is a proof of concept for next-generation wireless communication systems above 200 GHz leveraging industrial silicon technologies.Show less >
Show more >We report the use of a silicon based 211 GHz preamplifier for THz links. A test bench setup is assembled to evaluate the performance of the amplifier using a uni-traveling-carrier photodiode (UTC-PD) as the source of a 5Gbps modulated signal. The Bit Error Rate curve was extracted versus the input power, with and without the amplifier. It is verified that the system margin in the BER curve is improved in relation with the amplifier gain. The use of the silicon based active stage is a proof of concept for next-generation wireless communication systems above 200 GHz leveraging industrial silicon technologies.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :