Title :

RF reactive sputtering AlN thin film at room temperature for CMOS-compatible MEMS application

Author(s) :

Liu, Wen-Juan [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Xu, Wei-Jiang [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Transduction, Propagation et Imagerie Acoustique - IEMN [TPIA - IEMN]
Wang, Weizhen [Auteur]
State Key Laboratory of ASIC and System
He, Le-Ming [Auteur]
State Key Laboratory of ASIC and System
Zhou, Jia [Auteur]
State Key Laboratory of ASIC and System
Radhakrishnan, K. [Auteur]
Nanyang Technological University [Singapour]
Yu, Hao [Auteur]
Nanyang Technological University [Singapour]
Ren, Jun-Yan [Auteur]
State Key Laboratory of ASIC and System

Conference title :

2017 Joint IEEE International Symposium on the Applications of Ferroelectrics (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)

City :

Atlanta

Country :

Etats-Unis d'Amérique

Start date of the conference :

2017-05-07

Publisher :

IEEE

English keyword(s) :

"Aluminum nitride"
"III-V semiconductor materials"
"Substrates"
"Sputtering"
"Silicon"
"Electrodes"
"Surface treatment"

HAL domain(s) :

Sciences de l'ingénieur [physics]
Physique [physics]
Informatique [cs]

English abstract : [en]

Aluminum nitride (AlN) is widely used in SAW/FBAR devices, energy harvesting, biosensors, and ultrasonic transducers. The preparation of high-quality AlN film plays the key role on the process integration with CMOS circuits. ...
Show more >Aluminum nitride (AlN) is widely used in SAW/FBAR devices, energy harvesting, biosensors, and ultrasonic transducers. The preparation of high-quality AlN film plays the key role on the process integration with CMOS circuits. Here, we report an AlN thin film prepared by RF reactive sputtering at room temperature on substrate with different treatments, which is more suitable and economical for CMOS-compatible MEMS fabrication compared with previous works. The AlN thin film was deposited on Si/SiO 2 /Si 3 N 4 with different surface roughness, which were commonly employed as insulating layers or device layers in CMOS circuits. The morphological characterization by AFM and SEM showed that the AlN thin film was uniform and compact with low roughness and fine grain. The bottom Mo electrode was prepared by DC sputtering at room temperature. In addition, AlN seed layer from the same sputtering process increased the adhesion between the electrode and the substrate, thereby improving the stability of subsequent processes. In summary, we prepared uniform AlN with few defects by a simple and controllable approach. This strategy is potentially applied to CMOS-compatible optical and acoustic devicesShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL