Title :

Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.

Author(s) :

Manchon, Benoît [Auteur]
INL - Matériaux Fonctionnels et Nanostructures [INL - MFN]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Segantini, Greta [Auteur]
Royal Melbourne Institute of Technology University [RMIT University]
INL - Matériaux Fonctionnels et Nanostructures [INL - MFN]
Baboux, Nicolas [Auteur]
INL - Dispositifs Electroniques [INL - DE]
Rojo Romeo, Pedro [Auteur]
INL - Ingénierie et conversion de lumière (i-Lum) [INL - I-Lum]
Barhoumi, Rabei [Auteur]
INL - Dispositifs Electroniques [INL - DE]
Drouin, Dominique [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Ingrid C., Infante [Auteur]
INL - Dispositifs Electroniques [INL - DE]
Alibart, F. [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Vilquin, Bertrand [Auteur]
INL - Matériaux Fonctionnels et Nanostructures [INL - MFN]
Deleruyelle, Damien [Auteur]
INL - Dispositifs Electroniques [INL - DE]

Journal title :

physica status solidi (RRL) - Rapid Research Letters

Publisher :

Wiley-VCH Verlag

Publication date :

2022

ISSN :

1862-6254

English keyword(s) :

aluminum
ferroelectric HZO
ferroelectric tunnel junction
thin films

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by reactive magnetron sputtering is investigated. The oxidation of ...
Show more >Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by reactive magnetron sputtering is investigated. The oxidation of the interfacial layer during annealing due to scavenging of the Hf0.5Zr0.5O2 impacts both the ferroelectric properties and the electrical conductivity of the junction. It is shown that the overall conductivity of the junction is boosted 20 folds while the resistance ratio between the positive and negative polarization states is increased from 1.3 up to 3.7. Through a systematic analysis of programming conditions, pulse duration, and height, we show that both the remanent polarization and On/Off current ratio can be enhanced at the expanse of the endurance leading to a trade-off.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

European Project :

Marie Skłodowska-Curie grant agreement No 801512
Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL