Title :

Load-pull measurement of SiGe:C HBT in BiCMOS 55 nm featuring 11 dBm of output power at 185 GHz

Author(s) :

Maye, Caroline [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Brezza, E. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gauthier, A. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Margalef-Rovira, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gloria, D. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]

Conference title :

16th European Microwave Integrated Circuits Conference, EuMIC 2021

City :

London

Country :

Royaume-Uni

Start date of the conference :

2022-04-03

English keyword(s) :

Millimeter wave
load-pull measurement
integrated tuner
SiGe bipolar transistor
BiCMOS055

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this paper, we report high power performances at 185 GHz on single ended heterojunction bipolar transistors in the BiCMOS055 technology. Three device sizes were designed and characterized up to their saturation region. ...
Show more >In this paper, we report high power performances at 185 GHz on single ended heterojunction bipolar transistors in the BiCMOS055 technology. Three device sizes were designed and characterized up to their saturation region. This was possible thanks to a power setup which offers an available input power up to 13.9 dBm at 185 GHz. An innovative integrated tuner was also designed with each transistor to vary the load at the on-wafer output DUT plane. The output power, power gain and power added efficiency are finally extracted under different load conditions. An output power of 11.3 dBm ± 0.5 dB is reached for the larger effective emitter area that is 1.112μm 2 .Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Comment :

Session EuMIC01 - Large Signal and Non-linear Charaterization Techniques

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL