Title :

Effect of pulsed methane gas flow on the incorporation of phosphorous in diamond

Author(s) :

Mortet, V. [Auteur]
Czech Technical University in Prague [CTU]
Institute of Physics of the Czech Academy of Sciences [FZU / CAS]
Taylor, A. [Auteur]
Institute of Physics of the Czech Academy of Sciences [FZU / CAS]
Davydova, M. [Auteur]
Institute of Physics of the Czech Academy of Sciences [FZU / CAS]
Lamač, M. [Auteur]
Institute of Physics of the Czech Academy of Sciences [FZU / CAS]
Lambert, N. [Auteur]
Czech Technical University in Prague [CTU]
Institute of Physics of the Czech Academy of Sciences [FZU / CAS]
CHU Trousseau [APHP]
Elantyev, I. [Auteur]
Lorinčík, J. [Auteur]
Troadec, david [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vronka, M. [Auteur]
Institute of Physics of the Czech Academy of Sciences [FZU / CAS]
Potocký, S. [Auteur]
Institute of Physics of the Czech Academy of Sciences [FZU / CAS]

Journal title :

Diamond and Related Materials

Pages :

108928

Publisher :

Elsevier

Publication date :

2022-04

ISSN :

0925-9635

English keyword(s) :

Diamond
Phosphorus doping
Optical emission spectroscopy
PECVD

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The synthesis of n-type phosphorus-doped diamond is essential for the development of diamond-based bipolar devices. Although demonstrated 20 years ago, it remains a complex problem due to low incorporation efficiency and ...
Show more >The synthesis of n-type phosphorus-doped diamond is essential for the development of diamond-based bipolar devices. Although demonstrated 20 years ago, it remains a complex problem due to low incorporation efficiency and low maximum concentrations. Previous works showed the deleterious influence of methinophosphide formation in a methane/hydrogen/phosphine plasma on the growth of phosphorous doped diamond using the chemical vapor deposition method. In this work, we investigate the effect of pulsing methane during microwave plasma enhanced chemical vapor deposition to avoid the formation of HCP and to increase phosphorus incorporation efficiency and maximum concentration in diamond.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL