Title :

Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing

Author(s) :

El Mesoudy, Abdelouadoud [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Lamri, Gwénaëlle [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Dawant, Raphaël [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Arias-Zapata, Javier [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Gliech, Pierre [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Beilliard, Yann [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Ecoffey, Serge [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Ruediger, Andreas [Auteur]
Institut National de la Recherche Scientifique [Québec] [INRS]
Alibart, Fabien [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Drouin, Dominique [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]

Journal title :

MICROELECTRONIC ENGINEERING

Pages :

111706

Publisher :

Elsevier

Publication date :

2022-02

ISSN :

0167-9317

English keyword(s) :

Resistive switching
Artificial synapse
Memristor crossbars
CMOS-compatible
Damascene

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this ...
Show more >Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.Show less >

Language :

Anglais

Popular science :

Non

ANR Project :

Unsupervised spiking neural networks with analog memristive devices for edge computing

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL