Title :

Hot-carrier injections in SiO2

Author(s) :

Vuillaume, D [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bravaix, Alain [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Goguenheim, D [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]

Journal title :

Microelectronics Reliability

Pages :

7-22

Publisher :

Elsevier

Publication date :

1998-02

ISSN :

0026-2714

English keyword(s) :

Hot-Carriers
MOSFETs
gate-oxide
interface traps
oxide charges
dynamic aging
Stress-induced leakage currents

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through ...
Show more >We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier injections in MOSFETs and on the stress induced leakage currents in very thin (<∼5 nm) gate-oxide.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL