Hot-carrier injections in SiO2
Document type :
Article dans une revue scientifique
Title :
Hot-carrier injections in SiO2
Author(s) :
Vuillaume, D [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bravaix, Alain [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Goguenheim, D [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bravaix, Alain [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Goguenheim, D [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Journal title :
Microelectronics Reliability
Pages :
7-22
Publisher :
Elsevier
Publication date :
1998-02
ISSN :
0026-2714
English keyword(s) :
Hot-Carriers
MOSFETs
gate-oxide
interface traps
oxide charges
dynamic aging
Stress-induced leakage currents
MOSFETs
gate-oxide
interface traps
oxide charges
dynamic aging
Stress-induced leakage currents
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through ...
Show more >We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier injections in MOSFETs and on the stress induced leakage currents in very thin (<∼5 nm) gate-oxide.Show less >
Show more >We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier injections in MOSFETs and on the stress induced leakage currents in very thin (<∼5 nm) gate-oxide.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :