Title :

Towards 500GHz Non-Volatile Monolayer 6G Switches

Author(s) :

Kim, Myungsoo [Auteur]
Ulsan National Institute of Science and Technology [UNIST]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Skrzypczak, Simon [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Szriftgiser, Pascal [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Yang, Sung Jin [Auteur]
Wainstein, Nicolas [Auteur]
Technion - Israel Institute of Technology [Haifa]
Stern, Keren [Auteur]
Technion - Israel Institute of Technology [Haifa]
Happy, Henri [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Yalon, Eilam [Auteur]
Technion - Israel Institute of Technology [Haifa]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Akinwande, Deji [Auteur]

Conference title :

2022 IEEE/MTT-S International Microwave Symposium, IMS 2022

City :

Denver

Country :

Etats-Unis d'Amérique

Start date of the conference :

2022-06-19

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

High performance non-volatile analog switches based on monolayer MoS₂ are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS₂ enables low ...
Show more >High performance non-volatile analog switches based on monolayer MoS₂ are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS₂ enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS₂ switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10× higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

SWItches à base de dichalcogénures de métaux de transition pour des applications RF
Transmissions TERAhertz combinant électronique état SOlide et photoNIQue
Multiplexage SPATIal en gamme térahertz pour les cOmmunications sans fil à 1 TERAbit/s

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL