Influence of Current Collapse due to Vds ...
Document type :
Communication dans un congrès avec actes
Permalink :
Title :
Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region
Author(s) :
LU, Xuyang [Auteur]
Centrale Lille
Coventry University
Videt, Arnaud [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
LI, Ke [Auteur]
Coventry University
FARAMEHR, Soroush [Auteur]
Coventry University
IGIC, Petar [Auteur]
Coventry University
IDIR, Nadir [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
Centrale Lille
Coventry University
Videt, Arnaud [Auteur]

Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
LI, Ke [Auteur]
Coventry University
FARAMEHR, Soroush [Auteur]
Coventry University
IGIC, Petar [Auteur]
Coventry University
IDIR, Nadir [Auteur]

Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
Conference title :
EPE 2022 ECCE Europe (European Power Electronics)
City :
Hannover
Country :
Allemagne
Start date of the conference :
2022-09-05
English keyword(s) :
Gallium Nitride (GaN)
Double pulse test
Device characterisation
Switching losses
Threshold voltage shift
Double pulse test
Device characterisation
Switching losses
Threshold voltage shift
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds ...
Show more >A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id-Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id-Vds region.Show less >
Show more >A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id-Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id-Vds region.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Administrative institution(s) :
Université de Lille
Centrale Lille
Arts et Métiers Sciences et Technologies
Junia HEI
Centrale Lille
Arts et Métiers Sciences et Technologies
Junia HEI
Research team(s) :
Équipe Électronique de puissance
Submission date :
2022-09-02T11:23:41Z
2022-09-03T08:07:38Z
2022-09-03T08:07:38Z
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