Title :

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region

Author(s) :

LU, Xuyang [Auteur]
Centrale Lille
Coventry University
Videt, Arnaud [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
LI, Ke [Auteur]
Coventry University
FARAMEHR, Soroush [Auteur]
Coventry University
IGIC, Petar [Auteur]
Coventry University
IDIR, Nadir [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697

Conference title :

EPE 2022 ECCE Europe (European Power Electronics)

City :

Hannover

Country :

Allemagne

Start date of the conference :

2022-09-05

English keyword(s) :

Gallium Nitride (GaN)
Double pulse test
Device characterisation
Switching losses
Threshold voltage shift

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds ...
Show more >A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id-Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id-Vds region.Show less >

Language :

Anglais

Audience :

Internationale

Popular science :

Non

Administrative institution(s) :

Université de Lille
Centrale Lille
Arts et Métiers Sciences et Technologies
Junia HEI

Collections :

• Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697

Research team(s) :

Équipe Électronique de puissance

Submission date :

2022-09-02T11:23:41Z
2022-09-03T08:07:38Z