Title :

A fully <i>in-situ</i> reflectometer in G band in 55 nm SiGe BiCMOS

Author(s) :

Aouimeur, Walid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquiere, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lauga-Larroze, Estelle [Auteur]
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation [IMEP-LAHC ]
Arnould, Jean-Daniel [Auteur]
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation [IMEP-LAHC ]
Moron Guerra, José [Auteur]
ASYGN
Quémerais, Thomas [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Serhan, Ayssar [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]

Conference title :

INMMIC 2018 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits

City :

Brive La Gaillarde

Country :

France

Start date of the conference :

2018-07-05

Journal title :

International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC)

Publisher :

IEEE

English keyword(s) :

Built In Self Test
VNA
G Band
S-parameters
Frequency multiplier
Coupler
Mixer
SiGe BiCMOS 55 nm

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

This paper describes an in-situ reflectometer for one port VNA in 160 to 200 GHz band (G Band). The proposed system is fabricated in 55 nm SiGe BiCMOS technology from STMicroelectronics. Measured performances of system ...
Show more >This paper describes an in-situ reflectometer for one port VNA in 160 to 200 GHz band (G Band). The proposed system is fabricated in 55 nm SiGe BiCMOS technology from STMicroelectronics. Measured performances of system shown 110 mW of power DC consumption from a 1.2 V supply. A 180 GHz nMOS is measured as the device-under-test (DUT) after an in-situ calibration. The results obtained using this fully integrated VNA have been compared to a commercial VNA. A discrepancy of 0.3 dB is noted between the two systems on magnitude over a wide frequency range 172-192 GHz. Without calibration, the “raw” dynamics range of the system is limited by the directivity of the coupler which is 20 dB at 140-220 GHz. This dynamic will be improved after the calibration. The SiGe chip size is 3.3 mm² . To our best knowledge, the presented in-situ VNA have the first results compared to the recently published and are the first with an in-situ calibration integrated in SiGe or CMOS technologies.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Caractérisation totalement intégrée en bande G

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL