Titre :

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Auteur(s) :

Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Hamdaoui, Youssef [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Mehta, Jash Rinku [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Derluyn, Joff [Auteur]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Titre de la revue :

Micromachines
III–V Compound Semiconductors and Devices

Pagination :

1519

Éditeur :

MDPI

Date de publication :

2022

ISSN :

2072-666X

Mot(s)-clé(s) en anglais :

high-electron-mobility transistor (HEMT)
GaN
normally off

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Electronique

Résumé en anglais : [en]

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) ...
Lire la suite >We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than +1 V. The buffer structure was based on AlN/GaN superlattices (SLs), delivering a vertical breakdown voltage close to 1.5 kV with a low leakage current all the way to 1200 V. With the grounded substrate, the hard breakdown voltage transistors at VGS = 0 V is 1.45 kV, corresponding to an outstanding average vertical breakdown field higher than 2.4 MV/cm. High-voltage characterizations revealed a state-of-the-art combination of breakdown voltage at VGS = 0 V together with low buffer electron trapping effects up to 1.4 kV, as assessed by means of substrate ramp measurements.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Projet ANR :

Réseau national sur GaN

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL