Desorption timescales on epitaxial graphene ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Desorption timescales on epitaxial graphene via Fermi level shifting and Reststrahlen monitoring
Author(s) :
Tran, Ngoc Thanh Mai [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Mhatre, Swapnil [Auteur]
National Taiwan University [Taiwan] [NTU]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Santos, Cristiane [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Biacchi, Adam [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Kelley, Mathew [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Hill, Heather [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Saha, Dipanjan [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Liang, Chi-Te [Auteur]
National Taiwan University [Taiwan] [NTU]
Elmquist, Randolph [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Newell, David [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Hackens, Benoit [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Institut de la matière condensée et des nanosciences / Institute of Condensed Matter and Nanosciences [IMCN]
Hacker, Christina [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Rigosi, Albert [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Mhatre, Swapnil [Auteur]
National Taiwan University [Taiwan] [NTU]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Santos, Cristiane [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Biacchi, Adam [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Kelley, Mathew [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Hill, Heather [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Saha, Dipanjan [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Liang, Chi-Te [Auteur]
National Taiwan University [Taiwan] [NTU]
Elmquist, Randolph [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Newell, David [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Hackens, Benoit [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Institut de la matière condensée et des nanosciences / Institute of Condensed Matter and Nanosciences [IMCN]
Hacker, Christina [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Rigosi, Albert [Auteur]
National Institute of Standards and Technology [Gaithersburg] [NIST]
Journal title :
Carbon
Pages :
350-358
Publisher :
Elsevier
Publication date :
2022-09
ISSN :
0008-6223
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic ...
Show more >This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band.Show less >
Show more >This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band.Show less >
Language :
Anglais
Popular science :
Non
Source :