Molecular Electronics: electron, spin and ...
Document type :
Partie d'ouvrage
Title :
Molecular Electronics: electron, spin and thermal transport through molecules
Author(s) :
Vuillaume, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Scientific editor(s) :
A. Cresti
Book title :
Beyond-CMOS: state of the art and trends
Publisher :
ISTE
Publication date :
2023
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
This review presents recent results on the physics of electron transport in molecular devices. The review is organized as follows. A brief description of molecular junction (MJ) technology is first given followed by an ...
Show more >This review presents recent results on the physics of electron transport in molecular devices. The review is organized as follows. A brief description of molecular junction (MJ) technology is first given followed by an introduction to the basic physics of electron transport through MJs from DC to about 20 GHz. Then, several sections review selected results on spin-dependent transport, plasmonics, quantum interferences, thermal transport and electronic noise in ME devices.Show less >
Show more >This review presents recent results on the physics of electron transport in molecular devices. The review is organized as follows. A brief description of molecular junction (MJ) technology is first given followed by an introduction to the basic physics of electron transport through MJs from DC to about 20 GHz. Then, several sections review selected results on spin-dependent transport, plasmonics, quantum interferences, thermal transport and electronic noise in ME devices.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Source :
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