Title :

[Invited] Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Author(s) :

Huber, Christian [Auteur correspondant]
Bosch
Regensburger, S. [Auteur]
Bosch
Bahat-Treidel, E. [Auteur]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Baringhaus, Jens [Auteur]
Bosch

Conference title :

International Workshop on Nitride Semiconductors, IWN 2022

City :

Berlin

Country :

Allemagne

Start date of the conference :

2022-10-09

Book title :

Proceeding of IWN2022

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Despite considerable progress in their process technology during the last years, vertical GaN power transistors are currently not finding market entry due to the small size and high cost of native GaN substrates. This issue ...
Show more >Despite considerable progress in their process technology during the last years, vertical GaN power transistors are currently not finding market entry due to the small size and high cost of native GaN substrates. This issue can in principle be circumvented by using heteroepitaxial GaN on more affordable substrates. Recently, first demonstrations of vertical diodes [1] and transistors [2] for GaN-on-silicon have been published where vertical current flow was enabled by backside removal of the silicon substrate and the isolating buffer layers.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

European Project :

Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL