Impact of undoped channel thickness and ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances
Author(s) :
Harrouche, Kathia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Venkatachalam, Srisaran [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Grandpierron, François [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Venkatachalam, Srisaran [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Grandpierron, François [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Journal title :
Applied Physics Express
Pages :
116504
Publisher :
IOPScience - Japan Society of Applied Physics
Publication date :
2022-11
ISSN :
1882-0786
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
We report on a vertically scaled AlN/GaN HEMT technology design optimization for millimeter-wave applications. The undoped GaN channel thickness and carbon concentration into the buffer are extensively varied and systematically ...
Show more >We report on a vertically scaled AlN/GaN HEMT technology design optimization for millimeter-wave applications. The undoped GaN channel thickness and carbon concentration into the buffer are extensively varied and systematically characterized. It is found that a thin GaN channel, typically below 150 nm improves the electron confinement, but increases the trapping effects, especially when using shorter gate lengths. Moreover, high carbon concentration into the buffer enables not only high electron confinement but also low leakage current under a high electric field at the expense of trapping effects. As a result, the optimum epi-design enabled state-of-the-art RF performances at 40 GHz.Show less >
Show more >We report on a vertically scaled AlN/GaN HEMT technology design optimization for millimeter-wave applications. The undoped GaN channel thickness and carbon concentration into the buffer are extensively varied and systematically characterized. It is found that a thin GaN channel, typically below 150 nm improves the electron confinement, but increases the trapping effects, especially when using shorter gate lengths. Moreover, high carbon concentration into the buffer enables not only high electron confinement but also low leakage current under a high electric field at the expense of trapping effects. As a result, the optimum epi-design enabled state-of-the-art RF performances at 40 GHz.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
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