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Self-heating temperature measurement in ...
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Document type :
Article dans une revue scientifique
DOI :
10.1016/j.microrel.2022.114693
Permalink :
http://hdl.handle.net/20.500.12210/78124
Title :
Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers
Author(s) :
Strenaer, R. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Guhel, Y. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Brocero, G. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Gaquiere, C. [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boudart, B. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Journal title :
Microelectronics Reliability
Pages :
114693
Publisher :
Elsevier
Publication date :
2022-11
ISSN :
0026-2714
English keyword(s) :
GaN-based devices
Thermal characterization
Raman spectroscopy
Self-heating temperature
micro-Raman thermometers
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high ...
Show more >
Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high accuracy. This paper points out that all these thermal parameters can be measured by combining confocal Raman spectroscopy and micro-Raman thermometers. To prove these assertions, thermal resistance and Thermal Boundary Resistance (TBR) were accurately estimated experimentally. In addition, temperature measurements with TiO2 and CeO2 micro-Raman thermometers were carried out to determine which is more accurate and reliable in measuring the surface self-heating temperature of these components.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
Submission date :
2022-11-11T14:03:25Z
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