Title :

Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers

Author(s) :

Strenaer, R. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Guhel, Y. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Brocero, G. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Gaquiere, C. [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boudart, B. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072

Journal title :

Microelectronics Reliability

Pages :

114693

Publisher :

Elsevier

Publication date :

2022-11

ISSN :

0026-2714

English keyword(s) :

GaN-based devices
Thermal characterization
Raman spectroscopy
Self-heating temperature
micro-Raman thermometers

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high ...
Show more >Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high accuracy. This paper points out that all these thermal parameters can be measured by combining confocal Raman spectroscopy and micro-Raman thermometers. To prove these assertions, thermal resistance and Thermal Boundary Resistance (TBR) were accurately estimated experimentally. In addition, temperature measurements with TiO2 and CeO2 micro-Raman thermometers were carried out to determine which is more accurate and reliable in measuring the surface self-heating temperature of these components.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2022-11-11T14:03:25Z