Self-heating temperature measurement in ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers
Auteur(s) :
Strenaer, R. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Guhel, Y. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Brocero, G. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Boudart, B. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Equipe Electronique - Laboratoire GREYC - UMR6072
Guhel, Y. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Brocero, G. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Boudart, B. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Titre de la revue :
Microelectronics Reliability
Pagination :
114693
Éditeur :
Elsevier
Date de publication :
2022-11
ISSN :
0026-2714
Mot(s)-clé(s) en anglais :
GaN-based devices
Thermal characterization
Raman spectroscopy
Self-heating temperature
micro-Raman thermometers
Thermal characterization
Raman spectroscopy
Self-heating temperature
micro-Raman thermometers
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high ...
Lire la suite >Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high accuracy. This paper points out that all these thermal parameters can be measured by combining confocal Raman spectroscopy and micro-Raman thermometers. To prove these assertions, thermal resistance and Thermal Boundary Resistance (TBR) were accurately estimated experimentally. In addition, temperature measurements with TiO2 and CeO2 micro-Raman thermometers were carried out to determine which is more accurate and reliable in measuring the surface self-heating temperature of these components.Lire moins >
Lire la suite >Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high accuracy. This paper points out that all these thermal parameters can be measured by combining confocal Raman spectroscopy and micro-Raman thermometers. To prove these assertions, thermal resistance and Thermal Boundary Resistance (TBR) were accurately estimated experimentally. In addition, temperature measurements with TiO2 and CeO2 micro-Raman thermometers were carried out to determine which is more accurate and reliable in measuring the surface self-heating temperature of these components.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :