Effects of GaN channel downscaling in ...
Document type :
Article dans une revue scientifique: Article original
DOI :
Title :
Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate
Author(s) :
Elwaradi, Reda [Auteur]
Université Côte d'Azur [UniCA]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Mehta, Jash Rinku [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ngo, Thi Huong [Auteur]
Université Côte d'Azur [UniCA]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Nemoz, Maud [Auteur]
Université Côte d'Azur [UniCA]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Bougerol, Catherine [Auteur]
Fondation Grenoble INP
Nanophysique et Semiconducteurs [NEEL - NPSC]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur correspondant]
Université Côte d'Azur [UniCA]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Université Côte d'Azur [UniCA]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Mehta, Jash Rinku [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ngo, Thi Huong [Auteur]
Université Côte d'Azur [UniCA]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Nemoz, Maud [Auteur]
Université Côte d'Azur [UniCA]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Bougerol, Catherine [Auteur]
Fondation Grenoble INP
Nanophysique et Semiconducteurs [NEEL - NPSC]
Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur correspondant]
Université Côte d'Azur [UniCA]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Journal title :
Journal of Applied Physics
Pages :
145705
Publisher :
American Institute of Physics
Publication date :
2023-04-14
ISSN :
0021-8979
HAL domain(s) :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
English abstract : [en]
In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness ...
Show more >In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier, the channel downscaling results in a reduction in the GaN strain relaxation rate but at the expense of degradation in the mean crystal quality and in the electron mobility with a noticeable increase in the sheet resistance. An opposite trend is noticed for the three-terminal breakdown voltage of transistors, so that a trade-off is obtained for a 50 nm width GaN channel HEMT, which exhibits a sheet resistance of 1700 Ω/sq. with transistors demonstrating three-terminal breakdown voltage up to 1400 V for 40 μm gate to drain spacing with static on resistance R on = 32 mΩ cm 2 . On the other hand, a second series of HEMT structures with high aluminum content AlGaN barriers and sub-10 nm GaN channels have been grown perfectly strained with high sheet carrier densities allowing to preserve sheet resistances in the range of 880–1050 Ω/sq.Show less >
Show more >In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier, the channel downscaling results in a reduction in the GaN strain relaxation rate but at the expense of degradation in the mean crystal quality and in the electron mobility with a noticeable increase in the sheet resistance. An opposite trend is noticed for the three-terminal breakdown voltage of transistors, so that a trade-off is obtained for a 50 nm width GaN channel HEMT, which exhibits a sheet resistance of 1700 Ω/sq. with transistors demonstrating three-terminal breakdown voltage up to 1400 V for 40 μm gate to drain spacing with static on resistance R on = 32 mΩ cm 2 . On the other hand, a second series of HEMT structures with high aluminum content AlGaN barriers and sub-10 nm GaN channels have been grown perfectly strained with high sheet carrier densities allowing to preserve sheet resistances in the range of 880–1050 Ω/sq.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :
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