Titre :

SiGe quantum wells implementation in Si based nanowires for solar cells applications

Auteur(s) :

Safi, M. [Auteur]
Faculté De Technologie Blida1
Aissat, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faculté De Technologie Blida1
Guesmi, H. [Auteur]
Faculté De Technologie Blida1
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]

Titre de la revue :

Digest Journal of Nanomaterials and Biostructures

Pagination :

327-342

Éditeur :

Forum of Chalcogeniders

Date de publication :

2023

ISSN :

1842-3582

Mot(s)-clé(s) en anglais :

Nanowire
Quantum wells
Solar cells
Quantum efficiency

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Optique / photonique

Résumé en anglais : [en]

This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and ...
Lire la suite >This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL