Influence of processing gases on the ...
Type de document :
Article dans une revue scientifique
URL permanente :
Titre :
Influence of processing gases on the properties of cold atmospheric plasma SiOxCy coatings
Auteur(s) :
Hamze, H. [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Jimenez, Maude [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Unité Matériaux et Transformations (UMET) - UMR 8207
Deresmes, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Beaurain, Arnaud [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Nuns, Nicolas [Auteur]
Institut Michel Eugène Chevreul - FR 2638 [IMEC]
Traisnel, Michel [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Jimenez, Maude [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Unité Matériaux et Transformations (UMET) - UMR 8207
Deresmes, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Beaurain, Arnaud [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Nuns, Nicolas [Auteur]
Institut Michel Eugène Chevreul - FR 2638 [IMEC]
Traisnel, Michel [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Titre de la revue :
Applied Surface Science
Numéro :
315
Pagination :
531-537
Date de publication :
2014
Mot(s)-clé(s) en anglais :
Cold atmospheric plasma
SiOxCy coatings
Hexamethyldisilane
Tof-Sims
XPS
SiOxCy coatings
Hexamethyldisilane
Tof-Sims
XPS
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Génie des procédés
Chimie/Matériaux
Chimie/Polymères
Sciences de l'ingénieur [physics]/Génie des procédés
Chimie/Matériaux
Chimie/Polymères
Résumé en anglais : [en]
Thin layers of SiOxCy (y = 4−x and 3 ≤ x ≤ 4) were applied using a cold atmospheric plasma torch on glass substrates. The aim was to investigate using Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) ...
Lire la suite >Thin layers of SiOxCy (y = 4−x and 3 ≤ x ≤ 4) were applied using a cold atmospheric plasma torch on glass substrates. The aim was to investigate using Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (Tof-Sims) the influence of the gases used on the morphology and composition of the deposits. A hexamethyldisilane (HMDS) precursor was injected in post-discharge in an air or nitrogen plasma using a carrier gas (air or nitrogen) and was applied on the substrate previously pre-treated by an air or nitrogen plasma. The carrier gas and plasma gas flows and the distance between the substrate and the plasma torch, the scanning speed, and the precursor flows were kept constant during the study. The gas used during activation pre-treatment showed no particular influence on the characteristics of the deposit. When air is used both as plasma and carrier gas, the coating layer is thicker (96 nm) than when nitrogen is used (64 nm). It was also evidenced that the gas carrying the precursor has little influence on the hydrophobicity of the coating, contrary to the plasma gas. The latter significantly influences the surface characteristics of the coatings. When air is used as plasma gas, a compact coating layer is obtained and the surface has a water contact angle (WCA) of 82°. When nitrogen is used, the deposit is more hydrophobic (WCA of 100°) and the deposit morphology is different. This increase in hydrophobicity could be correlated to the increase of Sisingle bondOsingle bondC bonds in the upper surface layers evidenced by XPS analyzes. This observation was then confirmed by Tof-Sims analyzes carried out on these thin layers. A uniform distribution of Carbons in the siloxane coating could also be observed using Tof-Sims 2D reconstruction images of cross sections of the deposited layers.Lire moins >
Lire la suite >Thin layers of SiOxCy (y = 4−x and 3 ≤ x ≤ 4) were applied using a cold atmospheric plasma torch on glass substrates. The aim was to investigate using Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (Tof-Sims) the influence of the gases used on the morphology and composition of the deposits. A hexamethyldisilane (HMDS) precursor was injected in post-discharge in an air or nitrogen plasma using a carrier gas (air or nitrogen) and was applied on the substrate previously pre-treated by an air or nitrogen plasma. The carrier gas and plasma gas flows and the distance between the substrate and the plasma torch, the scanning speed, and the precursor flows were kept constant during the study. The gas used during activation pre-treatment showed no particular influence on the characteristics of the deposit. When air is used both as plasma and carrier gas, the coating layer is thicker (96 nm) than when nitrogen is used (64 nm). It was also evidenced that the gas carrying the precursor has little influence on the hydrophobicity of the coating, contrary to the plasma gas. The latter significantly influences the surface characteristics of the coatings. When air is used as plasma gas, a compact coating layer is obtained and the surface has a water contact angle (WCA) of 82°. When nitrogen is used, the deposit is more hydrophobic (WCA of 100°) and the deposit morphology is different. This increase in hydrophobicity could be correlated to the increase of Sisingle bondOsingle bondC bonds in the upper surface layers evidenced by XPS analyzes. This observation was then confirmed by Tof-Sims analyzes carried out on these thin layers. A uniform distribution of Carbons in the siloxane coating could also be observed using Tof-Sims 2D reconstruction images of cross sections of the deposited layers.Lire moins >
Langue :
Anglais
Audience :
Internationale
Vulgarisation :
Non
Établissement(s) :
Université de Lille
ENSCL
CNRS
Centrale Lille
INRA
Univ. Artois
ENSCL
CNRS
Centrale Lille
INRA
Univ. Artois
Collections :
Équipe(s) de recherche :
Ingénierie des Systèmes Polymères
Date de dépôt :
2019-05-16T16:01:07Z
2020-12-11T14:30:15Z
2020-12-11T14:30:15Z