Analysis of the Punchthrough Effect in ...
Type de document :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
Titre :
Analysis of the Punchthrough Effect in Walled Emitter Bipolar Transistors
Auteur(s) :
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Titre de la manifestation scientifique :
ESSDERC '89: 19th European Solid State Device Research Conference
Ville :
Berlin (DE)
Pays :
Allemagne
Date de début de la manifestation scientifique :
1989-09-11
Éditeur :
Springer Berlin Heidelberg
Date de publication :
1989
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
A detailed study of the punchthrough formation mechanism induced by the walled emitter configuration is proposed. Efficient process and device simulation tools -IMPACT- have been used and results have been successfully ...
Lire la suite >A detailed study of the punchthrough formation mechanism induced by the walled emitter configuration is proposed. Efficient process and device simulation tools -IMPACT- have been used and results have been successfully compared to measured characteristics.Lire moins >
Lire la suite >A detailed study of the punchthrough formation mechanism induced by the walled emitter configuration is proposed. Efficient process and device simulation tools -IMPACT- have been used and results have been successfully compared to measured characteristics.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :